Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. Identification of stacking faults in silicon carbide by polarization-settled second harmonic generation microscopy. We have been proud to generally be an ISO 9002 Accredited company, https://www.facebook.com/permalink.php?story_fbid=pfbid0214E77k8ReRGxDisum6VWPfVRu4qGo3yjAKJtxHPotsqLj2pMuJNLUznZtu7JpNexl&id=61562415773754&__cft__[0]=AZVdKRL6cOGRJtK1hN-mYss8rcvycT5AJw4Sksnu-EPNugE6SerCRT3S_ZqN_1jGcqaLmxQJ1Mz-YRLG-KoTyYFL_7H2g1G9U_bZEX0OPGJ9RybZKuqgHTs64TRS4ILwWL_kP7k5YX-ZEYrzx37bdbVChttbX9d74UQXS6uBlxPt3Vf2fQv0Xml_mV16BRl0fy7hPhORPOQioUMLjJVD8qZT&__tn__=%2CO%2CP-R